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FQB6N80TM

Product Name FQB6N80TM

Manufacturer onsemi

Describe MOSFET N-CH 800V 5.8A D2PAK

package FQB6N80TMTR

Datasheet fqb6n80-d.pdf

Quantity

MOSFET N-CH 800V 5.8A D2PAK

8,025 In Stock

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Product Attributes

Type PARAMETERS

Categories

Supplier Device Package

D²PAK (TO-263)

FET Feature

Drain to Source Voltage (Vdss)

800 V

Series

QFET®

Vgs(th) (Max) @ Id

5V @ 250µA

Base Product Number

FQB6N80

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.95Ohm @ 2.9A, 10V

Mfr

onsemi

Vgs (Max)

±30V

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FET Type

N-Channel

Current - Continuous Drain (Id) @ 25°C

5.8A (Tc)

Input Capacitance (Ciss) (Max) @ Vds

1500 pF @ 25 V

Power Dissipation (Max)

3.13W (Ta), 158W (Tc)

Package

Tape & Reel (TR)^^Cut Tape (CT)

Product Status

Obsolete

Gate Charge (Qg) (Max) @ Vgs

31 nC @ 10 V

Documents & Media

RESOURCE TYPE LINK

Payment Method

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Quality Inspection

package

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.