FQD20N06TM Online Order - Datasheet PDF Free Download

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FQD20N06TM

Product Name FQD20N06TM

Manufacturer Fairchild Semiconductor

Describe POWER FIELD-EFFECT TRANSISTOR, 1

package 2156-FQD20N06TM

Datasheet FAIRS45865-1.pdf

Quantity

POWER FIELD-EFFECT TRANSISTOR, 1

8,012 In Stock

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Product Attributes

Type PARAMETERS

Categories

FET Type

N-Channel

Drive Voltage (Max Rds On, Min Rds On)

10V

Series

QFET®

Drain to Source Voltage (Vdss)

60 V

Gate Charge (Qg) (Max) @ Vgs

15 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C

16.8A (Tc)

Package

Bulk

Mfr

Fairchild Semiconductor

Product Status

Active

Vgs(th) (Max) @ Id

4V @ 250µA

FET Feature

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Technology

MOSFET (Metal Oxide)

Vgs (Max)

±25V

Power Dissipation (Max)

2.5W (Ta), 38W (Tc)

Mounting Type

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds

590 pF @ 25 V

Rds On (Max) @ Id, Vgs

63mOhm @ 8.4A, 10V

Operating Temperature

-55°C ~ 150°C (TJ)

Documents & Media

RESOURCE TYPE LINK

Payment Method

Shipping

Quality Inspection

package

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.