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FQU3N60TU
FQU3N60TU
MOSFET N-CH 600V 2.4A IPAK
2156-FQU3N60TU-FS
FAIRS18463-1.pdf
MOSFET N-CH 600V 2.4A IPAK
2,831 In Stock
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Product Attributes
Type PARAMETERS
Categories
Mfr
Fairchild Semiconductor
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
600 V
Series
QFET®
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs
3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Current - Continuous Drain (Id) @ 25°C
2.4A (Tc)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Supplier Device Package
I-PAK
FET Type
N-Channel
Vgs (Max)
±30V
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Package
Tube
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
450 pF @ 25 V
Documents & Media
RESOURCE TYPE LINK
Payment Method
Shipping
Quality Inspection
package
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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