Gate Charge (Qg) (Max) @ Vgs
300 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Vgs(th) (Max) @ Id
4V @ 8mA
Rds On (Max) @ Id, Vgs
17mOhm @ 60A, 10V
Input Capacitance (Ciss) (Max) @ Vds
9100 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
560W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-264AA (IXFK)
Package / Case
TO-264-3, TO-264AA
Drain to Source Voltage (Vdss)
200 V