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IXFK210N17T
IXFK210N17T
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IXFK210N17T
IXFK210N17T
IXYS
MOSFET N-CH 170V 210A TO264AA
IXFK210N17T
MOSFET N-CH 170V 210A TO264AA
8,076 In Stock
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Product Attributes
Type PARAMETERS
Categories
Series
GigaMOS™
Drive Voltage (Max Rds On, Min Rds On)
10V
Mfr
IXYS
Gate Charge (Qg) (Max) @ Vgs
285 nC @ 10 V
Package
Tube
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
7.5mOhm @ 60A, 10V
Operating Temperature
-55°C ~ 175°C (TJ)
Product Status
Obsolete
Package / Case
TO-264-3, TO-264AA
Input Capacitance (Ciss) (Max) @ Vds
18800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1150W (Tc)
Supplier Device Package
TO-264AA (IXFK)
Current - Continuous Drain (Id) @ 25°C
210A (Tc)
Vgs(th) (Max) @ Id
5V @ 4mA
FET Type
N-Channel
Drain to Source Voltage (Vdss)
170 V
Vgs (Max)
±20V
Mounting Type
Through Hole
Documents & Media
RESOURCE TYPE LINK
Payment Method
Shipping
Quality Inspection
package
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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