Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
6.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Drain to Source Voltage (Vdss)
40 V
Input Capacitance (Ciss) (Max) @ Vds
3240 pF @ 25 V
Power Dissipation (Max)
200W (Tc)
Base Product Number
IXTP120
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V