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IXTP20N65XM
IXTP20N65XM
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IXTP20N65XM
IXTP20N65XM
IXYS
MOSFET N-CH 650V 9A TO220
IXTP20N65XM
MOSFET N-CH 650V 9A TO220
20,060 In Stock
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Product Attributes
Type PARAMETERS
Categories
Package
Tube
Drain to Source Voltage (Vdss)
650 V
Mfr
IXYS
Base Product Number
IXTP20
Series
Ultra X
Product Status
Active
Vgs (Max)
±30V
Rds On (Max) @ Id, Vgs
210mOhm @ 10A, 10V
FET Type
N-Channel
Vgs(th) (Max) @ Id
5.5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-220-3
FET Feature
-
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1390 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
63W (Tc)
Mounting Type
Through Hole
Package / Case
TO-220-3
Documents & Media
RESOURCE TYPE LINK
Payment Method
Shipping
Quality Inspection
package
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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