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RM10N30D2
RM10N30D2
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RM10N30D2
RM10N30D2
Rectron USA
MOSFET N-CH 30V 10A 6PQFN
2516-RM10N30D2TR
MOSFET N-CH 30V 10A 6PQFN
2,811 In Stock
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Product Attributes
Type PARAMETERS
Categories
Drain to Source Voltage (Vdss)
30 V
FET Feature
-
Package / Case
6-WDFN Exposed Pad
Product Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
730mW (Ta)
Series
-
Package
Tape & Reel (TR)
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Surface Mount
Mfr
Rectron USA
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Supplier Device Package
6-PQFN (2x2)
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1415 pF @ 15 V
Rds On (Max) @ Id, Vgs
12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Documents & Media
RESOURCE TYPE LINK
Payment Method
Shipping
Quality Inspection
package
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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