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SSR1N60BTM_F080
SSR1N60BTM_F080
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SSR1N60BTM_F080
SSR1N60BTM_F080
onsemi
MOSFET N-CH 600V 900MA DPAK
SSR1N60BTM_F080
MOSFET N-CH 600V 900MA DPAK
8,045 In Stock
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Product Attributes
Type PARAMETERS
Categories
Operating Temperature
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds
215 pF @ 25 V
Vgs (Max)
±30V
Supplier Device Package
TO-252AA
Mfr
onsemi
Series
-
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
900mA (Tc)
Rds On (Max) @ Id, Vgs
12Ohm @ 450mA, 10V
Power Dissipation (Max)
2.5W (Ta), 28W (Tc)
Mounting Type
Surface Mount
FET Type
N-Channel
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 250µA
Base Product Number
SSR1N
Gate Charge (Qg) (Max) @ Vgs
7.7 nC @ 10 V
FET Feature
-
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Package
Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On)
10V
Documents & Media
RESOURCE TYPE LINK
Payment Method
Shipping
Quality Inspection
package
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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